tag:seabaugh.nd.edu,2005:/newsSeabaugh Nanoelectronics | News2024-02-06T08:53:00-05:00tag:seabaugh.nd.edu,2005:News/1597192024-02-06T08:53:00-05:002024-02-06T08:53:48-05:00Professor Seabaugh gives invited talk at SEMICON Korea 2024<p>Alan Seabaugh gave an invited talk at SEMICON Korea 2024 in Seoul on future technology inflections in high-speed and low power transistors. Prior to the conference, Professor Seabaugh visited the lab of Professor Wan Sik Hwang at Korea Aerospace University. Professor Hwang was a visiting research professor and visiting researcher at Notre Dame's Midwest Institute for Nanoelectronics Discovery (2010-2013) and the Department of Electrical Engineering (2014, 2015, 2016, 2019-2020).…</p><p>Alan Seabaugh gave an invited talk at SEMICON Korea 2024 in Seoul on future technology inflections in high-speed and low power transistors. Prior to the conference, Professor Seabaugh visited the lab of Professor Wan Sik Hwang at Korea Aerospace University. Professor Hwang was a visiting research professor and visiting researcher at Notre Dame's Midwest Institute for Nanoelectronics Discovery (2010-2013) and the Department of Electrical Engineering (2014, 2015, 2016, 2019-2020).</p>Heidi Deethardttag:seabaugh.nd.edu,2005:News/1550142023-08-10T09:08:00-04:002023-08-10T09:18:47-04:00SRC newsletter recognizes Bob Bernhard retirement, ND-led centers<p>The August 2023 issue of the <a href="https://mailchi.mp/568692e0cc0e/src-connections-newsletter-8191637?e=52b5eb9984">Connections Newsletter</a>, published by the Semiconductor Research Corporation (SRC), featured the retirement of Robert Bernhard, Notre Dame vice president of research from 2007-2023. The article recaps the 15-year SRC-Notre Dame partnership that funded three ND-led centers: Midwest Institute for Nanoelectronics Discovery (<a href="https://seabaugh.nd.edu/research/collaborators/#MIND">MIND</a>…</p><p>The August 2023 issue of the <a href="https://mailchi.mp/568692e0cc0e/src-connections-newsletter-8191637?e=52b5eb9984">Connections Newsletter</a>, published by the Semiconductor Research Corporation (SRC), featured the retirement of Robert Bernhard, Notre Dame vice president of research from 2007-2023. The article recaps the 15-year SRC-Notre Dame partnership that funded three ND-led centers: Midwest Institute for Nanoelectronics Discovery (<a href="https://seabaugh.nd.edu/research/collaborators/#MIND">MIND</a>, 2008-2013), Center for Low Energy Systems Technology (LEAST, 2013-2017), and the Applications and Systems driven Center for Energy-Efficient Integrated NanoTechnologies (<a href="https://ascent.nd.edu/">ASCENT</a>, 2018-2023). In closing, the article notes the SRC-shared value of Dr. Bernhard's "passion for driving ground-breaking research in a collaborative fashion that supports the faculty and students." Read the <a href="https://nano.nd.edu/news-events/news/taking-research-to-heart/">Notre Dame feature</a> on Dr. Bernhard's VPR tenure.</p>Heidi Deethardttag:seabaugh.nd.edu,2005:News/1548902023-08-03T08:55:00-04:002023-08-03T08:55:49-04:00Welcome, Jiacheng!<p>Jiacheng Lyu joined the group on July 5 from Georgia Tech as an <a href="https://gep.nd.edu/find-a-program/summer-programs/undergraduate-research/">International Summer Research Experience (iSURE)</a> student . His research aim is to lower electronic barriers in a metal/ferroelectric/metal capacitor structure to create a ferroelectric diode to be used as a nonvolatile memory. This structure is targeted for analog memory in machine learning applications.…</p><p>Jiacheng Lyu joined the group on July 5 from Georgia Tech as an <a href="https://gep.nd.edu/find-a-program/summer-programs/undergraduate-research/">International Summer Research Experience (iSURE)</a> student . His research aim is to lower electronic barriers in a metal/ferroelectric/metal capacitor structure to create a ferroelectric diode to be used as a nonvolatile memory. This structure is targeted for analog memory in machine learning applications.</p>Heidi Deethardttag:seabaugh.nd.edu,2005:News/1537512023-06-01T09:17:00-04:002023-06-01T09:17:13-04:00Call for Papers on Steep Transistors<p>Alan Seabaugh will be a guest editor for the <a href="https://sscs.ieee.org/publications/ieee-journal-on-exploratory-solid-state-computational-devices-and-circuits-jcdc">IEEE Journal on Exploratory Solid-State Computational Devices and Circuits</a>. The special topics section, which is planned for December 2023, seeks papers on <a href="https://seabaugh.nd.edu/assets/518383/jxcdc_call_for_papers_special_topic_steep_transistors.pdf">Steep Slope Transistors for Energy-Efficient Computing & More.</a>…</p><p>Alan Seabaugh will be a guest editor for the <a href="https://sscs.ieee.org/publications/ieee-journal-on-exploratory-solid-state-computational-devices-and-circuits-jcdc">IEEE Journal on Exploratory Solid-State Computational Devices and Circuits</a>. The special topics section, which is planned for December 2023, seeks papers on <a href="https://seabaugh.nd.edu/assets/518383/jxcdc_call_for_papers_special_topic_steep_transistors.pdf">Steep Slope Transistors for Energy-Efficient Computing & More.</a></p>Heidi Deethardttag:seabaugh.nd.edu,2005:News/1529802023-05-03T18:00:23-04:002023-05-03T18:00:23-04:00The Chip Makers<p><em>Each year, a group of Notre Dame students receives a massive—though tiny—challenge: Build a semiconductor chip inside Notre Dame’s nanofabrication facility</em></p>
<p>It was the fall of 2021, and headlines were bristling with stories about the ongoing “chip choke.”</p>
<p>A group of Notre Dame engineering students taking a course called Integrated Circuit Fabrication, or IC Fab, followed the stories closely. Assembly lines were lurching back to life following the disruptions that came with the COVID-19 pandemic. However, many were stalled once again waiting for some of the tiniest components in the design of their products: semiconductor chips. Since the majority of the world’s most advanced semiconductors <a href="https://www.bcg.com/publications/2021/strengthening-the-global-semiconductor-supply-chain">come</a>…</p><p><em>Each year, a group of Notre Dame students receives a massive—though tiny—challenge: Build a semiconductor chip inside Notre Dame’s nanofabrication facility</em></p>
<p>It was the fall of 2021, and headlines were bristling with stories about the ongoing “chip choke.”</p>
<p>A group of Notre Dame engineering students taking a course called Integrated Circuit Fabrication, or IC Fab, followed the stories closely. Assembly lines were lurching back to life following the disruptions that came with the COVID-19 pandemic. However, many were stalled once again waiting for some of the tiniest components in the design of their products: semiconductor chips. Since the majority of the world’s most advanced semiconductors <a href="https://www.bcg.com/publications/2021/strengthening-the-global-semiconductor-supply-chain">come</a> from a single chip maker located on the island of Taiwan, there was no easy solution. Ford Motor Co. began filling acres of parking lots at Kentucky Speedway with new, nearly fully assembled Super Duty pickups, eventually amassing a stockpile so large it could be <a href="https://www.thedrive.com/news/40458/thousands-of-unfinished-ford-super-duty-trucks-are-parked-at-kentucky-speedway-due-to-chip-shortage">seen from space</a>.</p>
<p>Stories of the chip choke left the public outraged and incredulous: How could a component as thin and narrow as a thumbnail stop multibillion-dollar industries in their tracks?</p>
<p>But for the Notre Dame students in IC Fab, the stories were something else: relatable. That is because they, too, were chip makers, and they were in the throes of a chip choke of their own.</p>
<p>Read more <a href="https://www.nd.edu/stories/the-chip-makers/">here</a>. </p>
<p class="attribution">Originally published by <span class="rel-author">Office of Strategic Content</span> at <span class="rel-source"><a href="https://news.nd.edu/news/the-chip-makers/">news.nd.edu</a></span> on <span class="rel-pubdate">May 01, 2023</span>.</p>Office of Brand Contenttag:seabaugh.nd.edu,2005:News/1480292022-09-23T09:46:00-04:002022-09-23T09:48:25-04:00Professor Seabaugh gives invited talk at UB-IEEE Nano Symposium<p>In September, Alan Seabaugh was an invited speaker at the <a href="https://huaminli.wixsite.com/nanosymposium">2022 University of Buffalo-IEEE Nano Symposium</a>. Professor Seabaugh's <a href="https://e1eef42b-a9ec-4b44-a835-819b6043cf52.filesusr.com/ugd/1ca395_e6ff0272583941ffb5600fd9a48f40e0.pdf">talk on tunnel transistors</a>…</p><p>In September, Alan Seabaugh was an invited speaker at the <a href="https://huaminli.wixsite.com/nanosymposium">2022 University of Buffalo-IEEE Nano Symposium</a>. Professor Seabaugh's <a href="https://e1eef42b-a9ec-4b44-a835-819b6043cf52.filesusr.com/ugd/1ca395_e6ff0272583941ffb5600fd9a48f40e0.pdf">talk on tunnel transistors</a> was part of a special session recognizing the <a href="https://eds.ieee.org/about-eds/75th-anniversary-of-the-transistor">75th anniversary of the transistor</a>. The symposium was hosted by Professor Huamin Li, former Seabaugh Group postdoc (2014-2016).</p>
<p>Left to right: Fei Yao, Peide Ye, John Dallesasse, Aaron Franklin, Grace Xing, Alan Seabaugh, Uttam Singisetti, Hua-Min Li</p>Heidi Deethardttag:seabaugh.nd.edu,2005:News/1473702022-08-22T15:24:00-04:002022-08-22T15:24:19-04:00Notre Dame partners with 11 universities to address national semiconductor shortage<p>The University of Notre Dame has signed a memorandum of understanding to establish the Midwest Regional Network to Address National Needs in Semiconductor and Microelectronics.</p><p>The University of Notre Dame has signed a memorandum of understanding to establish the Midwest Regional Network to Address National Needs in Semiconductor and Microelectronics. The network will include 12 research universities in Indiana, Michigan and Ohio with the common goal of advancing semiconductor research, innovation and production.</p>
<p>“Semiconductors are indispensable to devices we use daily, from smartphones to computers to automobiles,” Notre Dame President <a href="https://president.nd.edu/about/">Rev. John I. Jenkins, C.S.C.</a>, said. “We are pleased that, together with our esteemed partners, Notre Dame will be able to use its strengths in semiconductor and microelectronics research to support the economic development of our Midwestern region and our nation at a crucial time.”</p>
<p>Although the United States’ share of global semiconductor manufacturing stands at just 12 percent, recent global semiconductor shortages have led manufacturers to announce nearly $80 billion in new investments in the U.S., including $20 billion from Intel Corp. to construct a state-of-the-art manufacturing facility outside of Columbus, Ohio.</p>
<p>“These new investments bring unprecedented opportunities for our students and faculty,” said <a href="https://engineering.nd.edu/faculty/alan-seabaugh/">Alan Seabaugh</a>, the Frank M. Freimann Professor of <a href="https://ee.nd.edu/">Electrical Engineering</a> and director of <a href="https://nano.nd.edu/">Notre Dame Nanoscience and Technology (NDnano)</a>. “It is exciting to see semiconductor manufacturing taking a foothold in the Midwest. Through this new collaboration, our students and researchers will be well-positioned to serve this urgent need.”</p>
<p>Seabaugh will serve on the network’s steering committee along with representatives from the 11 other member universities. The steering committee’s initial work will be to establish the network’s leadership and management structure, as well as to focus on three objectives. The first is to design the curriculum needed for preparing a skilled workforce. Second, it will advance research and innovation involving semiconductors and the devices and systems that rely on them. Lastly, the network will create opportunities for experiential learning — such as teaching laboratories — that can serve multiple universities.</p>
<p>The partnership between the universities will also enable them to collectively pursue state, federal and industry funding to grow their capacities to engage in semiconductor-related research. Each member university will also be invited to consider the ways its work on semiconductors can help address the particular needs and opportunities of the Midwest as a region.</p>
<p>The Midwest Regional Network to Address National Needs in Semiconductor and Microelectronics includes the following founding members: Ohio State University, Case Western Reserve University, Columbus State Community College, Lorain County Community College, Michigan State University, Purdue University, Sinclair Community College, University of Cincinnati, University of Dayton, University of Michigan, University of Notre Dame and Wright State University.</p>
<p>The network anticipates growth beyond the initial cohort of universities. To learn more or to become involved, visit <a href="https://nano.nd.edu/">nano.nd.edu</a>.</p>
<p><em><strong>Contact</strong>: Jessica Sieff, 574-631-3933, <a href="https://mail.google.com/mail/?view=cm&fs=1&tf=1&to=jsieff@nd.edu" target="_blank">jsieff@nd.edu</a></em></p>
<p class="attribution">Originally published by <span class="rel-author">Brett Beasley</span> at <span class="rel-source"><a href="https://news.nd.edu/news/notre-dame-partners-with-11-universities-to-address-national-semiconductor-shortage/">news.nd.edu</a></span> on <span class="rel-pubdate">August 04, 2022</span>.</p>Brett Beasleytag:seabaugh.nd.edu,2005:News/1480102022-08-15T12:03:00-04:002022-09-22T12:03:28-04:00Jiaqi presents at Notre Dame summer research symposium<p>Jiaqi Shen, an undergraduate researcher in Notre Dame's <a href="https://gep.nd.edu/find-a-program/summer-programs/undergraduate-research/">iSURE program</a>, presented her summer project with the Seabaugh Group at the summer undergraduate research symposium held at Jordan Hall of Science in July. Her project was entitled “Ferroelectric random access memory: Electron beam lithography, process development, mask design, and characterization.”…</p><p>Jiaqi Shen, an undergraduate researcher in Notre Dame's <a href="https://gep.nd.edu/find-a-program/summer-programs/undergraduate-research/">iSURE program</a>, presented her summer project with the Seabaugh Group at the summer undergraduate research symposium held at Jordan Hall of Science in July. Her project was entitled “Ferroelectric random access memory: Electron beam lithography, process development, mask design, and characterization.”</p>Heidi Deethardttag:seabaugh.nd.edu,2005:News/1480092022-07-15T11:59:00-04:002022-09-22T12:00:02-04:00Muntasir presents at 80th Device Research Conference<p>Second-year graduate student <a href="https://seabaugh.nd.edu/group/mir-muntasir-hossain/">Mir Muntasir Hossain</a> presented a poster entitled “Pulsed current-voltage protocol to reveal polarization-continuation in ferroelectric memory: Implications for partial state storage,” at the 80th Device Research Conference held at Ohio State University in June.…</p><p>Second-year graduate student <a href="https://seabaugh.nd.edu/group/mir-muntasir-hossain/">Mir Muntasir Hossain</a> presented a poster entitled “Pulsed current-voltage protocol to reveal polarization-continuation in ferroelectric memory: Implications for partial state storage,” at the 80th Device Research Conference held at Ohio State University in June.</p>Heidi Deethardttag:seabaugh.nd.edu,2005:News/1415142021-11-08T11:20:00-05:002021-11-08T11:22:23-05:00Congratulations, Karla!<p>On October 28, Karla Gonzalez successfully defended her dissertation. Her research is titled, "Nanoscale Solid Polymer Electrolytes in Metal–Insulator–Conductor Systems for Logic and Neuromorphic Devices."…</p><p>On October 28, Karla Gonzalez successfully defended her dissertation. Her research is titled, "Nanoscale Solid Polymer Electrolytes in Metal–Insulator–Conductor Systems for Logic and Neuromorphic Devices."</p>Heidi Deethardttag:seabaugh.nd.edu,2005:News/1330302020-12-31T11:45:00-05:002021-01-07T10:27:36-05:00Electrical properties of record thin polyethylene oxide capacitors reveal band diagram, interface, and dielectric constant<p>In a paper just accepted by the <em>Journal of Electronic Materials</em>, Karla Gonzalez-Serano showed a spin coating method for polyethylene oxide: cesium percholorate capable of producing films as thin as 6 nm, “Electrical properties of 6 to 19 nm thick polyethylene oxide capacitors for ion/electron functional devices.” This work forms the basis for neuromorphic device applications.…</p><p>In a paper just accepted by the <em>Journal of Electronic Materials</em>, Karla Gonzalez-Serano showed a spin coating method for polyethylene oxide: cesium percholorate capable of producing films as thin as 6 nm, “Electrical properties of 6 to 19 nm thick polyethylene oxide capacitors for ion/electron functional devices.” This work forms the basis for neuromorphic device applications.</p>Alan Seabaughtag:seabaugh.nd.edu,2005:News/1330312020-12-14T11:00:00-05:002021-01-07T10:28:14-05:00Congratulations, Pratyush!<p>Pratyush Pandey successfully defended his dissertation entitled, “Ferroelectric memory based on partial polarization for analog weight storage.”…</p><p>Pratyush Pandey successfully defended his dissertation entitled, “Ferroelectric memory based on partial polarization for analog weight storage.”</p>Alan Seabaughtag:seabaugh.nd.edu,2005:News/1330322020-10-31T12:00:00-04:002021-01-07T10:28:33-05:00Subcritical domain dynamics in polycrystalline ferroelectric memory revealed<p>Polycrystalline ferroelectrics like hafnium zirconate (HZO) and lead-zirconium-titanate (PZT) switch at a speed determined by the nucleation and growth of ferroelectric domains that exceed a critical volume. Reading and writing of a ferroelectric memory is achieved by a sequence of voltage pulses. It was found that subcritical domains that do not reach the critical volume can persist for times as long as 1 s and as a result effect the response of the memory to subsequent writing. This is especially important when using the memory to store analog weights. This finding was reported by Pratyush Pandey in the October 2020 issue of <em>IEEE Transactions on Electron Devices</em>…</p><p>Polycrystalline ferroelectrics like hafnium zirconate (HZO) and lead-zirconium-titanate (PZT) switch at a speed determined by the nucleation and growth of ferroelectric domains that exceed a critical volume. Reading and writing of a ferroelectric memory is achieved by a sequence of voltage pulses. It was found that subcritical domains that do not reach the critical volume can persist for times as long as 1 s and as a result effect the response of the memory to subsequent writing. This is especially important when using the memory to store analog weights. This finding was reported by Pratyush Pandey in the October 2020 issue of <em>IEEE Transactions on Electron Devices</em>, <a href="https://doi.org/10.1109/TED.2020.3015794">“Programming-pulse dependence of ferroelectric partial polarization: insights from a comparative study of PZT and HZO capacitors.”</a> The subcritical domains in HZO were found to persist for times as long as 1 s. Ted Moise and Uday Udayakumar of Texas Instruments provided PZT capacitors to compare alongside Notre Dame HZO capacitors. The persistence of subcritical domains was found to be much weaker in PZT.</p>Alan Seabaughtag:seabaugh.nd.edu,2005:News/1282192020-08-13T13:40:00-04:002021-01-07T10:30:35-05:00Electric‐double‐layer p–i–n junctions in WSe2<p>Nearly ideal p-i-n junctions in WSe<sub>2</sub> are reported by Sara Fathipour and Paolo Paletti in the <a href="https://doi.org/10.1038/s41598-020-69523-9">July issue <em>Scientific Reports</em></a>. These junctions exhibit the highest currents with most ideal rectification properties reported to date in doped homojunctions in 2D materials.…</p><p>Nearly ideal p-i-n junctions in WSe<sub>2</sub> are reported by Sara Fathipour and Paolo Paletti in the <a href="https://doi.org/10.1038/s41598-020-69523-9">July issue <em>Scientific Reports</em></a>. These junctions exhibit the highest currents with most ideal rectification properties reported to date in doped homojunctions in 2D materials.</p>Alan Seabaughtag:seabaugh.nd.edu,2005:News/1330332020-07-31T12:00:00-04:002021-01-07T10:31:05-05:00On intelligence, spike-timing-dependent plasticity, and rule-guided learning devices<p>iSURE student and Penn State undergraduate Lixian Yan, presented the findings of her summer research experience at a July 29 virtual forum at Notre Dame.…</p><p>iSURE student and Penn State undergraduate Lixian Yan, presented the findings of her summer research experience at a July 29 virtual forum at Notre Dame.</p>Alan Seabaughtag:seabaugh.nd.edu,2005:News/1330342020-06-24T12:00:00-04:002021-01-07T10:31:20-05:00Karla Gonzalez-Serano presents at the virtual Electronic Materials Conference<p>Polyethylene oxide (PEO) containing an alkali perchlorate has been widely used to electrolytically gate thin film and two-dimensional semiconductors. In this paper, Karla discussed the properties of PEO at the limits of thickness scaling. Transmission electron microscopy and impedance frequency measurements were utilized on films as thin as 8 nm for applications in logic and memory.…</p><p>Polyethylene oxide (PEO) containing an alkali perchlorate has been widely used to electrolytically gate thin film and two-dimensional semiconductors. In this paper, Karla discussed the properties of PEO at the limits of thickness scaling. Transmission electron microscopy and impedance frequency measurements were utilized on films as thin as 8 nm for applications in logic and memory.</p>Alan Seabaughtag:seabaugh.nd.edu,2005:News/1330352020-05-05T12:30:00-04:002021-01-07T10:31:37-05:00Alessandri, Kinder, Seabaugh granted US Patent 10,643,694<p>This device patent shows ways to configure a ferroelectric transistor in a two-terminal configuration to create a resistive analog memory element. The configuration enables channel conductivity modulation via ferroelectric partial polarization.…</p><p>This device patent shows ways to configure a ferroelectric transistor in a two-terminal configuration to create a resistive analog memory element. The configuration enables channel conductivity modulation via ferroelectric partial polarization.</p>Alan Seabaughtag:seabaugh.nd.edu,2005:News/1240442020-03-27T12:45:00-04:002021-01-07T10:31:59-05:00Batch-fabricated WSe2-on-sapphire field-effect transistors grown by chemical vapor deposition<p>Much of the measurements on atomically thin transistors are obtained from transistors fabricated on specially selected crystals. Once a suitable crystal (with dimensions of approximately 100 square microns) is identified, the transistor and lead arrangements are custom designed to enable fabrication and test. In a paper published in the <a href="https://doi.org/10.1109/TED.2020.2974450"><em>IEEE Transactions on Electron Devices</em></a>…</p><p>Much of the measurements on atomically thin transistors are obtained from transistors fabricated on specially selected crystals. Once a suitable crystal (with dimensions of approximately 100 square microns) is identified, the transistor and lead arrangements are custom designed to enable fabrication and test. In a paper published in the <a href="https://doi.org/10.1109/TED.2020.2974450"><em>IEEE Transactions on Electron Devices</em></a> in April (2020) Mina Asghari Heidarlou shows the results of a batch-fabrication process she developed on materials grown by Bhakti Jariwala at Penn State by chemical vapor deposition. Her study of approximately 100 transistors gives a first look at two-dimensional materials in processes that are translatable to manufacturing. Paolo Paletti shows that the characteristics are well described by a simple compact model.</p>Alan Seabaughtag:seabaugh.nd.edu,2005:News/1240412020-03-27T11:00:00-04:002021-01-07T10:32:16-05:00Model of MoS2 nanoribbon Schottky field-effect transistors accounts for measurements from subthreshold to saturation<p>Transport in 2D materials is often boiled down to measurements of the electron or hole mobility from simplistic transistor equations. These measurements are frequently in error because the Schottky contacts to 2D materials are nonlinear. In a paper published in the <a href="https://doi.org/10.1063/1.5127769"><em>Journal of Applied Physics</em></a>…</p><p>Transport in 2D materials is often boiled down to measurements of the electron or hole mobility from simplistic transistor equations. These measurements are frequently in error because the Schottky contacts to 2D materials are nonlinear. In a paper published in the <a href="https://doi.org/10.1063/1.5127769"><em>Journal of Applied Physics</em></a> in January (2020), Paolo Paletti describes a compact large-signal model which accounts for both the contacts and the intrinsic transistor. He shows remarkable agreement with transport measurements vs. gate length from low to high biases bringing confidence to the interpretation of transport in these materials.<br>
</p>Alan Seabaughtag:seabaugh.nd.edu,2005:News/1330602020-02-01T08:35:00-05:002021-01-07T10:32:44-05:00Resolution enhancement in transmission electron microscopy<p>Yide Zhang with Sergei Rouvimov, Xiaotong Yuan, Karla Gonzalez-Serrano, Alan Seabaugh, and Scott Howard, showed that a super-resolution analytic approach developed for fluorescence microscopy, can be used to enhance the resolution and quality of TEM images. This was published in the January 2020 issue of <em>Applied Physics Letters</em>…</p><p>Yide Zhang with Sergei Rouvimov, Xiaotong Yuan, Karla Gonzalez-Serrano, Alan Seabaugh, and Scott Howard, showed that a super-resolution analytic approach developed for fluorescence microscopy, can be used to enhance the resolution and quality of TEM images. This was published in the January 2020 issue of <em>Applied Physics Letters</em>, “<a href="https://doi.org/10.1063/1.5128353">Resolution enhancement of transmission electron microscopy by super-resolution radial fluctuations</a>.”</p>Alan Seabaugh