Dominic Keene

Project Title

Plasma reactive ion etching of metal-HfZrO₂-metal ferroelectic capacitors for nonvolatile memory

Abstract

The project seeks to optimize etch rates and etch selectivities for W/HfZrO₂/W on SiO₂ capacitors for use in the back-end-of-the-line memory. This study will then proceed to examine scandium as an electrode to lower the barrier height and raise the thermionic and conduction currents.

Dominic Keene Resumé