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Seabaugh Full Vita

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ORCID: 0000-0001-6907-4129

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Ph.D. Dissertations and Masters Theses Advised

Ph.D. Dissertations Advised

  1. D17. Pratyush Pandey, "Ferroelectric memory based on partial polarization for analog weight storage," Ph.D. Disseration, University of Notre Dame, December 2020.
  2. D16. Paolo Paletti, "Tunnel field-effect transistors: Device models and experiments on two-dimensional semiconductors, including demonstration of electric-double-layer Esaki junctions," Ph.D. Dissertation, Univ. of Notre Dame, November 2019.
  3. D15. Mina AsghariHeidarlou, "Synthesized WSe2 field-effect transistors and process for steep transistors," Ph.D. Dissertation, Univ. of Notre Dame, July 2019.
  4. D14. Cristobal Alessandri, "Ferroelectric memory and architecture for deep neural network training in resistive crossbar arrays," Ph.D. Dissertation, Univ. of Notre Dame, April 2019.
  5. D13. Sara Fathipour, "Electric double layer doping and process development for transition-metal-dichalcogenide tunnel field-effect transistors," Ph.D. Dissertation, Univ. of Notre Dame, October 2017.
  6. D12. Hao Lu, “Development of nanometer ion conductor for 2D-crystal memory and universal tunnel transistor Spice model,” Ph.D. Dissertation, Univ. of Notre Dame, December 2016.
  7. D11. Timothy J. Vasen, “Investigation of III-V tunneling field-effect transistors,” Ph.D. Dissertation, Univ. of Notre Dame, May 2014.
  8. D10. Bin Wu, “InAs-on-SOI MOSFETs with extreme lattice mismatch,” Ph.D. Dissertation, Univ. of Notre Dame, December 2009.
  9. D9. Sajid Kabeer, “Indium-gallium-arsenide and germanium tunnel junctions,” Ph.D. Dissertation, Univ. of Notre Dame, April 2009.
  10. D8. Dana C. Wheeler, “High-k-InAs metal-oxide-semiconductor capacitors formed by atomic-layer deposition,” Ph.D. Dissertation, Univ. of Notre Dame, April 2009.
  11. D7. Qin Zhang, “Interband tunnel transistors,” Ph.D. Dissertation, Univ. of Notre Dame, April 2009.
  12. D6. Surajit Sutar, “Tunneling-based memory and advances in InP-based processing,” Ph.D. Dissertation, Univ. of Notre Dame, March 2009.
  13. D5. Yan Yan, “Silicon-based tunnel diode technology,” Ph.D. Dissertation, Univ. of Notre Dame, July 2008.
  14. D4. Zoltán Rácz, “Piezoflexure-enabled nanofabrication using translated stencil masks,” Ph.D. Dissertation, Univ. of Notre Dame, April 2007.
  15. D3. Jialin Zhao, “Engineering of silicon and germanium tunnel diodes for integrated circuit application,” Ph.D. Dissertation, Univ. of Notre Dame, April 2007.
  16. D2. Wei Zhao, “Impact of uniaxial strain on the electrical characteristics of MOSFETs and Esaki tunnel diodes,” Ph.D. Dissertation, Univ. of Notre Dame, April 2006.
  17. D1. Qingmin Liu, “Tunnel diode/transistor integrated circuits,” Ph.D. Dissertation, Univ. of Notre Dame, April 2006.

Master Theses Advised

  1. M5. Kamal Karda, “Low power bistable-body tunnel SRAM,” M. S. Thesis, Univ. of Notre Dame, December 2009. (co-advisor)
  2. M4. Subhash S. Pidaparthi, “Low current density silicon tunnel diodes,” M. S. Thesis, Univ. of Notre Dame, April 2003.
  3. M3. Surajit K. Sutar, “Processing issues in the development of indium-arsenide-base heterojunction bipolar transistors,” M. S. Thesis, Univ. of Notre Dame, April 2003.
  4. M2. Bin Wu, “Sb-based high electron mobility transistors: Processing and device characterization,” M. S. Thesis, Univ. of Notre Dame, April 2003.
  5. M1. Sajid Kabeer, “Silicon/silicon-germanium heterostructure tunnel diodes,” M. S. Thesis, Univ. of Notre Dame, April 2003.

Theses

  1. AS3. A. C. Seabaugh, “Transient photoresistance spectroscopy of deep levels in semiconductors,” Ph.D. Dissertation, Univ. of Virginia, Charlottesville, 1985.
  2. AS2. A. C. Seabaugh, “Liquid phase epitaxy for millimeter wave mixer diodes,” M. S. Thesis, Univ. of Virginia, Charlottesville, 1979
  3. AS1. A. C. Seabaugh, “The Experimistor,” B. S. Thesis, Univ. of Virginia, Charlottesville, 1977.