In transistors, steep subthreshold swing can result simply from gate delay in the switching of a complex oxide. In an invited paper at the IEEE Conf. on Advanced Semiconductor Integrated Circuits (ASICON) in Chongqing, "Dynamics of Ferroelectric and Ionic Memories," SPICE simulations by Anwesha Palit demonstrate a slew-rate dependent gate delay can be obtained even in a conventional MOSFET with a series gate resistance.