Transport in 2D materials is often boiled down to measurements of the electron or hole mobility from simplistic transistor equations. These measurements are frequently in error because the Schottky contacts to 2D materials are nonlinear. In a paper published in the Journal of Applied Physics in January (2020), Paolo Paletti describes a compact large-signal model which accounts for both the contacts and the intrinsic transistor. He shows remarkable agreement with transport measurements vs. gate length from low to high biases bringing confidence to the interpretation of transport in these materials.