WanSik Hwang's paper is "Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors" is published in Nature Partner Journal 2D Materials and Applications. In this paper, he experimentally demonstrates band-gap opening in graphene nanoribbons and the formation of a gate-controlled Esaki tunnel junction. His results represent the thinnest manifestation of a low-power tunnel field-effect transistor (TFET).